2010. 2. 5 1/2 semiconductor technical data PG05DXTE6 tvs diode for esd protection in portable electronics revision no : 4 protection in portable electronics applications. features 30 watts peak pulse power (tp=8/20 )s transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) small package for use in portable electronics. suitable replacement for multi-layer varistors in esd protection applications. protects one i/o or power line. low clamping voltage. low leakage current. applications cell phone handsets and accessories. microprocessor based equipment. personal digital assistants (pdas) notebooks, desktops, & servers. portable instrumentation. pagers peripherals. maximum rating (ta=25) dim millimeters a a1 b1 c tes6 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 6 4 p p p5 5 + _ + _ + _ + _ + _ + _ + _ 1. (tvs) d1 cathode 2. common anode 3. (tvs) d2 cathode 4. (tvs) d3 cathode 5. n. c. 6. (tvs) d4 cathode electrical characteristics (ta=25 ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 30 w junction temperature t j 150 storage temperature t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =1ma 6.1 - 7.2 v reverse leakage current i r v rwm =3v - - 0.5 a junction capacitance c j v r =0v, f=1mhz - - 15 pf marking 123 4 65 123 4 5 6 d4 d3 d1 d2 5d type name lot no.
2010. 2. 5 2/2 PG05DXTE6 revision no : 4 110 100 10 100 1k peak pulse power 8/20us average power waveform parameters : tr=8 s e -t td=20 s td=lpp/2 rated power or i pp (%) 0 110 70 50 25 0 power deration curve 75 100 125 150 10 20 30 40 80 90 50 100 60 ambient temperature ta ( c) peak pulse current i pp (%) 0 110 70 10 5 0 time ( s) pulse waveform 15 20 25 30 10 20 30 40 80 90 50 100 60 non-repetitive peak pulse power vs. pulse time pulse duration tp ( s) peak pulse power p pp (w)
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